डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D649 | 2SD649 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated |
Inchange Semiconductor |
|
D6450 | UPD6450 | NEC |
|
D649 | 2SD649 | Inchange Semiconductor |
|
D6453GT | UPD6453GT | NEC |
|
D64084 | UPD64084 | NEC |
|
D64GS | UPD64GS | NEC |
|
D64082 | THREE-DIMENSIONAL Y/C SEPARATION LSI | NEC |
|
D647A | 2SD647A | Toshiba |
|
D6467 | ON-SCREEN CHARACTER DISPLAY CMOS IC | NEC |
|
D6461 | CMOS LSI CHIP | NEC |
|
D64DV5 | NPN POWER DARLINGTON TRANSISTORS | GE |
www.DataSheet.in | 2017 | संपर्क |