डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D2562 | 2SD2562 INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 500 |
Inchange Semiconductor |
|
D2560 | 2SD2560 | Sanken electric |
|
D2562 | 2SD2562 | Inchange Semiconductor |
|
D256 | 2SD256 | ETC |
www.DataSheet.in | 2017 | संपर्क |