CY7C199 डाटा शीट PDF( Datasheet )

CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW (max, 12 ns “L” version) • Low standby power — 0.275 mW (max,

CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz clock for high bandwidth �

CY7C199C 32K x 8 Static RAM Features • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL–compatible Inputs and Out

CY7C199D 256-Kbit (32K × 8) Static RAM 256-Kbit (32K × 8) Static RAM Features ■ Temperature range ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA = 10 ns ■ Lo

32 K × 8 Static RAM Features ■ High speed ❐ 15 ns ■ Fast tDOE ■ CMOS for optimum speed/power ■ Low active power ❐ 550 mW (max, 15 ns “L” version) ■ Low standby power ❐ 0.275 mW (max, “L�