CY62148 डाटा शीट PDF( Datasheet )

1CY 621 48 fax id: 1079 www.DataSheet4U.com PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standb

 CY62148DV30 4-Mbit (512 K × 8) MoBL® Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features ■ Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Wide voltage range

CY62148E MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ ■ Functional Description The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-

CY62148ESL MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ Functional Description The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-

CY62148EV30 MoBL® 4-Mbit (512K × 8) Static RAM 4-Mbit (512K × 8) Static RAM Features ■ Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +

CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-

CY62148G 4-MB MoBL™ ultra-low-power RAM with ECC (512K words × 8-bit) Features • High speed: 45 ns/55 ns • Ultra-low standby power - Typical standby current: 3.5 µA - Maximum standby current: 8.7 µA �