CSD30N30 डाटा शीट PDF( Datasheet )

CSD30N30 N-Channel Trench Power MOSFET General Description The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This devi

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor CSD30N30 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot