डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CS7N60 | VDMOS type field effect transistor 汇川电子
CS7N60 型 VDMOS 场效应晶体管
用途:主要用于电源适配器、充电器等线性放大和功率开关电路。
特点:开关速度快,通态电阻低,驱动电路简单等。� |
Kymmene Electronics |
|
CS7N60A3R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS7N60 A3R
○R
General Description:
CS7N60 A3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction los |
Huajing Microelectronics |
|
CS7N60A4R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS7N60 A4R
○R
General Description:
CS7N60 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction los |
Huajing Microelectronics |
|
CS7N60A7HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS7N60 A7HD
○R
General Description:
CS7N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss |
Huajing Microelectronics |
|
CS7N60A8HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS7N60 A8HD
○R
General Description:
CS7N60 A8HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction l |
Huajing Microelectronics |
|
CS7N60FA9HD | Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS7N60FA9HD
General Description:
CS7N60FA9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
whic |
Huajing Discrete Devices |
|
CS7N60FA9HDY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS7N60F A9HDY
○R
General Description:
CS7N60F A9HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conducti |
Huajing Microelectronics |
www.DataSheet.in | 2017 | संपर्क |