CS630 डाटा शीट PDF( Datasheet )

Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 1200 1400 1600 CS 630-12io1 CS 630-14io1 CS 630-16io1 1 Symb

Silicon N-Channel Power MOSFET CS630 A3H ○R General Description： CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, im

Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, im

Silicon N-Channel Power MOSFET CS630 A8H ○R General Description： CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, im

BRD630(CS630D) N-Channel MOSFET/N 沟 MOS 晶体管 用途:用于高效 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode p

华晶分立器件 CS630F CS630F 型 VDMOS 晶体管 1. 概述与特点 CS630F 型 VDMOS 晶体管，主要用于线性放大、功率开关。其特点如下： ● 开关速度快 ● 通态电阻低 ● �

Silicon N-Channel Power MOSFET CS630F A9H ○R General Description： CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,