CS2N60F डाटा शीट PDF( Datasheet )

华晶分立器件 CS2N60(F) CS2N60(F)型 VDMOS 晶体管 1.概述与特点 CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开 关电路。 具有�

BRF2N60(CS2N60F) 用途: 用于高功率 DC/DC 转换和功率开关。 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switchi

Silicon N-Channel Power MOSFET CS2N60F A9H ○R General Description： VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25