डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CS2N60 | N-CHANNEL MOSFET BR2N60(CS2N60)
N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch m |
LZG |
|
CS2N60 | VDMOS Transistor 华晶分立器件
CS2N60(F)
CS2N60(F)型 VDMOS 晶体管
1.概述与特点
CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管,主要用于电源适配器、充电器等各种功率开 关电路。 具有� |
ETC |
|
CS2N60A3H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS2N60 A3H
○R
General Description:
VDSS
600 V
CS2N60 A3H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25� |
Huajing Microelectronics |
|
CS2N60A4H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N60 A4H
○R
General Description:
VDSS
600 V
CS2N60 A4H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25� |
Huajing Microelectronics |
|
CS2N60A4T | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS2N60 A4T
○R
General Description:
CS2N60 A4T, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction los |
Huajing Microelectronics |
|
CS2N60A7H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N60 A7H
○R
General Description:
VDSS
600 V
CS2N60 A7H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25� |
Huajing Microelectronics |
|
CS2N60F | VDMOS Transistor 华晶分立器件
CS2N60(F)
CS2N60(F)型 VDMOS 晶体管
1.概述与特点
CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管,主要用于电源适配器、充电器等各种功率开 关电路。 具有� |
ETC |
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