CS1N60 डाटा शीट PDF( Datasheet )

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Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description： CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,

Silicon N-Channel Power MOSFET CS1N60 A3H ○R General Description： VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25

Silicon N-Channel Power MOSFET CS1N60 B1R ○R General Description： CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,

Silicon N-Channel Power MOSFET CS1N60 B3R ○R General Description： CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss,

Silicon N-Channel Power MOSFET CS1N60 C1H ○R General Description： CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction los

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD General Description： CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which red