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CRS20 | SMD Reflective Sensor www.DataSheet4U.com
CERLED® Ceramic Chip SMD
SMD – Reflective Sensor CRS 20
D A T A S H E E T
Description
This opto device is specially designed for all applications where the space is very limited and a |
PerkinElmer Optoelectronics |
|
CRS2010 | High Power Anti-Surge Chip Resistor *RoHS COMPLIANT
1001
Features
■ Anti-surge ■ Wide resistance range ■ RoHS compliant*
Applications
■ Pulse power applications ■ High voltage applications ■ Consumer electronics ■ Telecommunicati |
BOURNS |
|
CRS2010A | High Power Anti-Surge Resistor AEC-*Q*2H*0AR0LoCOHOGSEMCNPOLFIMRAPENLEITA&NT,
Features
■ Thick film technology ■ Power rating up to 2 watts at 70 °C ■ High power surge withstanding ■ Sulfur-resistant design (ASTM B-809) ■ RoHS c |
BOURNS |
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CRS20I30A | Schottky Barrier Rectifier TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS20I30A
Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices
• Forward voltage: VFM = 0.49 V (max) @ IFM = 2 |
Toshiba |
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CRS20I30B | Schottky Barrier Diode Schottky Barrier Diode
CRS20I30B
1. Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.45 V (max) @IF |
Toshiba |
|
CRS20I40A | Schottky Barrier Diode Schottky Barrier Diode
CRS20I40A
1. Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.6 V (max) @IFM |
Toshiba |
|
CRS20I40B | Schottky Barrier Diode Schottky Barrier Diode
CRS20I40B
1. Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.52 V (max) @IF |
Toshiba |
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