डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CPC5603C | N-Channel FET CPC5603C
N Channel Depletion Mode FET
www.DataSheet4U.com
Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package si |
Clare |
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CPC5603C | N-Channel FET INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power
Rating 415 14 2.5
Units V
W
Features
• 415V Drain-to-Source Voltage • Depletion Mode Device |
IXYS |
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CPC5603CTR | N-Channel FET INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power
Rating 415 14 2.5
Units V
W
Features
• 415V Drain-to-Source Voltage • Depletion Mode Device |
IXYS |
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