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Central Semiconductor |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF ns ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 IDSS VDS=60V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS |
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