CFY25 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type |
 Siemens Semiconductor Group |
|
| CFY25 | HiRel X-Band GaAs MOSFET CFY25...
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically seale |
 Infineon |
|
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type |
Siemens Semiconductor Group |
|
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type |
Siemens Semiconductor Group |
|
| CFY25-20 | HiRel X-Band GaAs MOSFET CFY25...
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically seale |
Infineon |
|
| CFY25-20P | HiRel X-Band GaAs MOSFET CFY25...
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically seale |
Infineon |
|
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type |
Siemens Semiconductor Group |
शेयर लिंक :
[1] [2]
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