डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEV2306 | N-Channel MOSFET CEV2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. L |
CET |
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CEV2306 | N-Channel MOSFET | CET |
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CEV2309 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |