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CET4401B   P-Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead
Chino-Excel Technology
Chino-Excel Technology
PDF
CET4401B   P-Channel MOSFET Chino-Excel Technology
Chino-Excel Technology
PDF




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