डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CET3055 | N-Channel Enhancement Mode Field Effect Transistor CET3055
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired |
Chino-Excel Technology |
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CET3055L | N-Channel Enhancement Mode Field Effect Transistor CET3055L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Le |
Chino-Excel Technology |
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