डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES388 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
CES388
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.54 V (typ). (2) Low reverse current : IR(1) = 1 µA (max). (3) Small and |
Toshiba |
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CES388 | Schottky Barrier Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |