डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2362 | N-Channel MOSFET N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free |
Chino-Excel Technology |
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CES2362 | N-Channel MOSFET | Chino-Excel Technology |
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CES2361 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |