डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2331 | P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS |
Chino-Excel Technology |
|
CES2331 | P-Channel MOSFET | Chino-Excel Technology |
|
CES2336 | N-Channel MOSFET | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |