डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2317 | P-Channel MOSFET CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V.
High dense cell design for extremel |
CET |
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CES2310 | N-Channel MOSFET | Chino-Excel Technology |
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CES2317 | P-Channel MOSFET | CET |
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CES2313A | P-Channel MOSFET | Chino-Excel Technology |
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CES2316 | N-Channel MOSFET | Chino-Excel Technology |
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CES2314 | N-Channel MOSFET | Chino-Excel Technology |
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CES2313 | P-Channel MOSFET | Chino-Excel Technology |
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CES2312 | N-Channel MOSFET | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |