डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2314 | N-Channel MOSFET CES2314
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 4A, RDS(ON) = 50mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acq |
Chino-Excel Technology |
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CES2310 | N-Channel MOSFET | Chino-Excel Technology |
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CES2317 | P-Channel MOSFET | CET |
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CES2313A | P-Channel MOSFET | Chino-Excel Technology |
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CES2316 | N-Channel MOSFET | Chino-Excel Technology |
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CES2312 | N-Channel MOSFET | Chino-Excel Technology |
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CES2314 | N-Channel MOSFET | Chino-Excel Technology |
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CES2313 | P-Channel MOSFET | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |