CES2313 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| CES2313 | P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -3.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead |
 Chino-Excel Technology |
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| CES2313A | P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 86mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead |
Chino-Excel Technology |
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