CES2310 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| CES2310 | N-Channel MOSFET N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). |
 Chino-Excel Technology |
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| CES2310 | N-Channel MOSFET | Chino-Excel Technology |
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| CES2317 | P-Channel MOSFET |  CET |
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| CES2313A | P-Channel MOSFET | Chino-Excel Technology |
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| CES2316 | N-Channel MOSFET | Chino-Excel Technology |
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| CES2312 | N-Channel MOSFET | Chino-Excel Technology |
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| CES2314 | N-Channel MOSFET | Chino-Excel Technology |
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| CES2313 | P-Channel MOSFET | Chino-Excel Technology |
शेयर लिंक :
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