डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CES2303 | P-Channel MOSFET CES2303
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(ON) = 230mΩ (typ) @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugg |
Chino-Excel Technology |
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CES2301 | P-Channel MOSFET | CET |
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CES2304 | N-Channel MOSFET | CET |
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CES2308 | N-Channel MOSFET | Chino-Excel Technology |
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CES2305 | P-Channel MOSFET | Chino-Excel Technology |
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CES2306 | N-Channel MOSFET | CET |
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CES2302 | N-Channel MOSFET | Chino-Excel Technology |
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CES2307 | P-Channel MOSFET | Chino-Excel Technology |
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CES2309 | P-Channel MOSFET | Chino-Excel Technology |
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CES2303 | P-Channel MOSFET | Chino-Excel Technology |
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CES2307A | P-Channel MOSFET | CET |
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