डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEP3100 | N-Channel MOSFET CEP3100
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). Hig |
CET |
|
CEP3100 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |