डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEN2301 | P-Channel MOSFET CEN2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.7A, RDS(ON) = 110mΩ @VGS = -4.5V. RDS(ON) = 160mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and rel |
CET |
|
CEN2301 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |