डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM8958 | Dual Enhancement Mode Field Effect Transistor(N and P Channel) CEM8958
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
-30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ |
Chino-Excel Technology |
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CEM8958A | Dual Enhancement Mode Field Effect Transistor CEM8958A
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. R |
CET |
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CEM8958G | Dual-Channel MOSFET CEM8958G
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
-30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS |
CET |
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