डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM8809 | N-Channel MOSFET CEM8809
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 15.5A, RDS(ON) = 5.5mΩ(typ) @VGS = 10V. RDS(ON) = 7.5mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hig |
Chino-Excel Technology |
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CEM8809 | N-Channel MOSFET | Chino-Excel Technology |
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