डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM6601 | P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and curr |
CET |
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CEM6600 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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CEM6608 | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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CEM6607 | Dual P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEM6601 | P-Channel Enhancement Mode Field Effect Transistor | CET |
www.DataSheet.in | 2017 | संपर्क |