डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM6200 | N-Channel Enhancement Mode Field Effect Transistor CEM6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). |
Chino-Excel Technology |
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CEM6200 | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |