CEM4410 डाटा शीट PDF( Datasheet )

CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and

CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). Hig