डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM3258 | Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and curren |
CET |
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CEM3258A | Dual N-Channel MOSFET CEM3258A
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON |
CET |
www.DataSheet.in | 2017 | संपर्क |