डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM3252 | N-Channel Enhancement Mode Field Effect Transistor CEM3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and c |
CET |
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CEM3252L | N-Channel Enhancement Mode Field Effect Transistor CEM3252L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V.
Super high dense cell design for extremely |
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