डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEM2108 | Dual N-Channel Enhancement Mode Field Effect Transistor CEM2108
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power |
CET |
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CEM2108E | Dual N-Channel MOSFET CEM2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 19mΩ @VGS = 2.5V. RDS(ON) = 27mΩ @VGS |
CET |
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