डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEK01N65 | N-Channel Enhancement Mode Field Effect Transistor www.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free prod |
CET |
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CEK01N65A | N-Channel Enhancement Mode Field Effect Transistor www.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product |
CET |
www.DataSheet.in | 2017 | संपर्क |