CEH2312 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| CEH2312 | N-Channel MOSFET CEH2312
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugg |
 CET |
|
| CEH2310 | N-Channel Enhancement Mode Field Effect Transistor | CET |
|
| CEH2312 | N-Channel MOSFET | CET |
|
| CEH2313 | P-Channel Enhancement Mode Field Effect Transistor | CET |
|
| CEH2311 | P-Channel Enhancement Mode Field Effect Transistor | CET |
|
| CEH2316 | N-Channel Enhancement Mode Field Effect Transistor | CET |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |