डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEH2311 | P-Channel Enhancement Mode Field Effect Transistor CEH2311
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V.
RDS(ON) = 130mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reli |
CET |
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CEH2310 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2312 | N-Channel MOSFET | CET |
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CEH2313 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2311 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2316 | N-Channel Enhancement Mode Field Effect Transistor | CET |
www.DataSheet.in | 2017 | संपर्क |