डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEH2307 | P-Channel MOSFET CEH2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and relia |
CET |
|
CEH2305 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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CEH2307 | P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |