डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEG9926 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High |
Chino-Excel Technology |
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CEG9926 | Dual N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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