डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEG2288 | Dual N-Channel MOSFET CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High pow |
CET |
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CEG2288 | Dual N-Channel MOSFET | CET |
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CEG2287 | Dual P-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |