डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CED16N10L | N-Channel MOSFET N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current |
Chino-Excel Technology |
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CED16N10 | N-Channel MOSFET | CET |
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CED16N10L | N-Channel MOSFET | Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |