डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CED02N7G | N-Channel MOSFET N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free |
Chino-Excel Technology |
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CED02N7G-1 | N-Channel MOSFET CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and |
CET |
www.DataSheet.in | 2017 | संपर्क |