डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB75N06 | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free pr |
CET |
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CEB75N06G | N-Channel MOSFET CEP75N06G/CEB75N06G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing cap |
CET |
www.DataSheet.in | 2017 | संपर्क |