CEB6086 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor CEB6086 FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100% avala

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capabi

CEP6086L/CEB6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely lo