डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB603 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
CEB603 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
CEB6030AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
CEB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEP6030L/CEB6030L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High |
Chino-Excel Technology |
|
CEB6030LS2 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEP6030LS2/CEB6030LS2
PRELIMINARY
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 52A , RDS(ON)=13.5m Ω
@VGS=10V.
RDS(ON)=20m Ω
@VGS=4.5V.
Super high dense cell design fo |
Chino-Excel Technology |
|
CEB6031L | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEP6031L/CEB6031L
March 1998
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4 FEATURES
30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V.
Super high dense cell design for extreme |
Chino-Excel Technology |
|
CEB6031LS2 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEP6031LS2/CEB6031LS2
March 1998
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 60A , RDS(ON)=12m Ω @VGS=10V.
RDS(ON)=17mΩ @VGS=4.5V.
Super high dense cell design for extr |
Chino-Excel Technology |
www.DataSheet.in | 2017 | संपर्क |