डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB50N06 | N-Channel MOSFET N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead f |
CET |
|
CEB50N06 | N-Channel MOSFET | CET |
www.DataSheet.in | 2017 | संपर्क |