CAB450M12XM3 डाटा शीट PDF( Datasheet )

CAB450M12XM3 VDS 1200 V 5 4 IDS 3 450 A 2 1 1200 V, 2.6 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operat

VDS 1200 V CAB450M12XM3 IDS 450 A 1200V, 450A All-Silicon Carbide 5432 Conduction Optimized, Half-Bridge Module Technical Features • High Power Density Footprint • High Junction Temperature (1