डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3M0120100J | Silicon Carbide Power MOSFET VDS 1000 V
C3M0120100J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 120 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC MOSFET techn |
CREE |
|
C3M0120100J | Silicon Carbide Power MOSFET C3M0120100J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology
N-Channel Enhancement Mode TAB Drain
Drain (TAB)
Features
• C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver sou |
Wolfspeed |
www.DataSheet.in | 2017 | संपर्क |