C3M0120090J डाटा शीट PDF( Datasheet )

C3M0120090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed

C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocki